We extend in this paper the treatment of the high field magnetoresistance of a previously described classical model of a semiconductor (plasma) containing a two‐dimensional distribution of inhomogeneities. The basic assumptions on the classical model are that the scale of the inhomogeneities is large compared to the mean thermal wavelength of an electron and the Landau level spacing is large compared to kT. The magnetic field H is taken parallel to the z coordinate and the inhomogeneity distribution is characterized by a sufficiently smooth potential φ(x, z). The 4‐moment equations are solved asymptotically for large H, and an equivalent asymptotic solution is obtained, subject to certain mathematical assumptions, for the transport equation. The magnetoresistance is shown, in general, not to saturate, but to increase, as H2, with increasing H.